PART |
Description |
Maker |
FW905 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device 7 A, 20 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device SANYO SEMICONDUCTOR CO LTD
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FDS898407 FDS8984 |
N-Channel PowerTrench? MOSFET N-Channel PowerTrench庐 MOSFET N-Channel PowerTrench㈢ MOSFET N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm 7 A, 30 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp.
|
HI3-0506A-5 HI3-0507A-5 HI3-0509A-5 HI3-506A HI3-5 |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection
|
Intersil Corporation
|
FDS8858CZ |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
|
Fairchild Semiconductor
|
UT6898G-S08-R UT6898G-S08-T UT6898L-S08-R UT6898L- |
N-CHANNEL ENHANCEMENT 9.4 A, 20 V, 0.014 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, SOP-8
|
Unisonic Technologies Co., Ltd.
|
DMN5L06VAK DMN5L06VK-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 280 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Inc. Diodes, Inc.
|
SIZ702DT-T1-GE3 |
N-Channel 30-V (D-S) MOSFETs 13.8 A, 30 V, 0.012 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR-6
|
Vishay Siliconix Vishay Intertechnology, Inc.
|
6AM14 |
Silicon N-Channel/P-Channel Power MOS FET Array 硅N-Channel/P-Channel功率MOS FET阵列
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
FDC6420 FDC6420C FDC6420CD84Z |
20V N & P-Channel PowerTrench MOSFETs 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
|
IXTL2X240N055T |
140 A, 55 V, 0.0044 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET ISOPLUS, I5PAC-5 N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
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